Effect of intrinsic stress from a nanoscale high-dielectric constant gate oxide on strain in a transistor channel

Applied Physics Letters

Volumn 91, Issue 1, 2007, Pages

  Wang, Hongtao ^a   Ramanathan, Shriram ^a  

^a HARVARD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC FILM DEPOSITIONS; SEMICONDUCTOR CHANNELS; STRAIN FIELDS; TRANSISTOR CHANNEL;

DIELECTRIC FILMS; FINITE ELEMENT METHOD; HOLE MOBILITY; OPTIMIZATION; PERMITTIVITY; STRAIN; STRESS ANALYSIS;

SEMICONDUCTOR DEVICES;

EID: 36049021291     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2753732     Document Type: Article

References (16)

1. H.-S. P. Wong, IBM J. Res. Dev. 46, 133 (2002).
2. M. L. Lee, E. A. Fitzgerald, M. T. Bulsara, M. T. Currie, and A. Lochtefeld, J. Appl. Phys. 97, 011101 (2005).
3. C. W. Liu, S. Maikap, and C. Y. Yu, IEEE Circuits Devices Mag. 21, 21 (2005).
4. S. H. Olsen, K. S. K. Kwa, L. S. Driscoll, S. Chattopadhyay, and A. G. O'Neill, IEE Proc.: Circuits Devices Syst. 151, 431 (2004).
5. S. E. Thompson, M. Armstrong, C. Auth, S. Cea, R. Chau, G. Glass, T. Hoffman, J. Klaus, Z. Y. Ma, B. McIntyre, A. Murthy, B. Obradovic, L. Shifren, S. Sivakumar, S. Tyagi, T. Ghani, K. Mistry, M. Bohr, and Y. El-Mansy, IEEE Electron Device Lett. 25, 191 (2004).
6. R. Koch, D. Winau, A. Fuhrmann, and K. H. Rieder, Phys. Rev. B 44, 3369 (1991).
7. E. D. Jason, Ph.D. thesis, Harvard University, 2004.
8. S. J. Wang and C. K. Ong, Appl. Phys. Lett. 80, 2541 (2002).
9. A. Al-Bayati, L. Washington, L. Xia, M. Balseanu, Z. Yuan, M. Kawaguchi, F. Nouri, and R. Arghavani, in Semiconductor Fabtech, 26th edition, edited by, Bernard Henry, (Trans-World House, London, 2004), Vol. 26, p. 84-88.
10. ABAQUS is a trade mark of AQAQUS Inc. (Website link: http://www.hks.com/) .
11. N. Mohta and S. E. Thompson, IEEE Circuits Devices Mag. 21, 18 (2005).
12. S. E. Thompson, G. Y. Sun, Y. S. Choi, and T. Nishida, IEEE Trans. Electron Devices 53, 1010 (2006).
13. S. E. Thompson, M. Armstrong, C. Auth, M. Alavi, M. Buehler, R. Chau, S. Cea, T. Ghani, G. Glass, T. Hoffman, C. H. Jan, C. Kenyon, J. Klaus, K. Kuhn, Z. Y. Ma, B. McIntyre, K. Mistry, A. Murthy, B. Obradovic, R. Nagisetty, P. Nguyen, S. Sivakumar, R. Shaheed, L. Shiften, B. Tufts, S. Tyagi, M. Bohr, and Y. El-Mansy, IEEE Trans. Electron Devices 51, 1790 (2004).
14. J. R. Barber, Elasticity, 1st ed. (Kluwer Academic, Dordrecht, Netherlands, 1992), Vol. 12, p. 59-67.
15. COMSOL is a trade mark of COMSOL Inc. (URL: http://www.comsol.com/).
16. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. (Wiley, New York, 1981), p. 50-51.