Influence of boron on the point defect equilibrium in highly n-doped gallium arsenide single crystals

Physica B: Condensed Matter

Volumn 401-402, Issue , 2007, Pages 246-249

  Kretzer, U ^a   Borner F ^a   Bunger T ^b   Eichler, S ^a  

^a FREIBERGER COMPOUND MATERIALS GMBH   (Germany)

^b Norddeutsche Affinerie AG   (Germany)

Author keywords

Electrical compensation; Fermi level effect; Gallium arsenide; Silicon doping

Indexed keywords

BORON; DOPING (ADDITIVES); HALL MOBILITY; SEMICONDUCTING GALLIUM ARSENIDE; SILICON COMPOUNDS; TELLURIUM COMPOUNDS;

ACCEPTOR DEFECTS; DEFECT EQUILIBRIUM; ISOELECTRONICS;

SINGLE CRYSTALS;

EID: 36048990352     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2007.08.158     Document Type: Article

References (20)

1. Fornari R., Paorici C., Zanotti L., and Zuccalli G. J. Cryst. Growth 63 (1983) 415
2. Kung J.K., and Spitzer W.G. J. Appl. Phys. 45 (1974) 2254
3. Greene P.D. J. Cryst. Growth 50 (1980) 612
4. Chen R.T., Rana V., and Spitzer W.G. J. Appl. Phys. 51 (1980) 1532
5. Elliot A.G., Flat A., and Vanderwater V.D. J. Cryst. Growth 121 (1992) 349
6. Fujinami M., and Chilton N.B. Appl. Phys. Lett. 63 (1993) 3458
7. Birkmann B., Müller G., Wiedemann B., Weingärtner R., and Wellmann P. J. Cryst. Growth 237-239 (2002) 345
8. Lorimor O.G., and Spitzer W.G. J. Appl. Phys. 37 (1966) 3687
9. Spitzer W.G., and Allred W.P. J. Appl. Phys. 39 (1968) 4999
10. Ono H., and Newman R.C. J. Appl. Phys. 66 (1989) 141
11. Gebauer J., Lausmann M., Staab T.E.M., Krause-Rehberg R., Hakala M., and Puska M.J. Phys. Rev. B 60 (1999) 1464
12. Bünger T., Behr D., Eichler S., Flade T., Fliegel W., Jurisch M., Kleinwechter A., Kretzer U., Steinegger T., and Weinert B. Mat. Sci. Eng. B 80 (2001) 5
13. Jurisch M., Börner F., Bünger T., Eichler S., Flade T., Kretzer U., Köhler A., Stenzenberger J., and Weinert B. J. Cryst. Growth 275 (2004) 283
14. Korb J., Flade T., Jurisch M., Köhler A., Reinhold T., and Weinert B. J. Cryst. Growth 198-199 (1999) 343
15. Eichler S., Seidl A., Börner F., Kretzer U., and Weinert B. J. Cryst. Growth 247 (2004) 69
16. Mullin J.B., Royle A., and Benn S. J. Cryst. Growth 50 (1980) 625
17. Thompson F., and Newman R.C. J. Phys. C 5 (1972) 1999
18. Look D.C. Electrical Characterization of GaAs Materials and Devices (1989), Wiley, Chichester pp. 76-79
19. Gebauer J., Krause-Rehberg R., Domke C., Ebert P., and Urban K. Phys. Rev. Lett. 78 (1997) 3334
20. Hannig C., Schwichtenberg G., Buhrig E., and Gärtner G. Mat. Sci. Eng. B 66 (1999) 97