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Materials Science and Engineering B: Solid-State Materials for Advanced Technology

Volumn 66, Issue 1, 1999, Pages 97-101

Study of silicon-doped VGF-GaAs by DSL-etching and LVM spectroscopy and the influence of B2O3 coating

(4) Hannig, C a Schwichtenberg, G a Buhrig, E a Gartner G a

a TU BERGAKADEMIE FREIBERG (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BORON COMPOUNDS; CARRIER CONCENTRATION; COATINGS; CRYSTAL GROWTH; DISLOCATIONS (CRYSTALS); ELECTRON IRRADIATION; ENCAPSULATION; ETCHING; LATTICE VIBRATIONS; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH;

ETCH PIT DENSITY (EPD); LOCAL VIBRATIONAL MODES (LVM) SPECTROSCOPY; VERTICAL GRADIENT FREEZE (VGF) METHOD;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0033283617 PISSN: 09215107 EISSN: None Source Type: Journal
DOI: 10.1016/S0921-5107(99)00092-6 Document Type: Article

Times cited : (14)

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