Ordinary and extraordinary Coulomb blockade magnetoresistance in a (Ga, Mn)As single electron transistor

Solid State Communications

Volumn 144, Issue 12, 2007, Pages 536-541

  Wunderlich, J ^a,b   Jungwirth, T ^b,c   Novak V ^b   Irvine, A C ^d   Kaestner, B ^e   Shick, A B ^b   Foxon, C T ^c   Campion, R P ^c   Williams, D A ^a   Gallagher, B L ^c  

^a HITACHI CAMBRIDGE LABORATORY   (United Kingdom)

^b INSTITUTE OF PHYSICS   (Czech Republic)

^c UNIVERSITY OF NOTTINGHAM   (United Kingdom)

^d UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^e NATIONAL PHYSICAL LABORATORY   (United Kingdom)

Author keywords

A. Magnetic semiconductors; A. Nanostructures; D. Spin orbit effects; D. Tunneling

Indexed keywords

ANISOTROPY; ELECTRON TRANSITIONS; FERROMAGNETIC MATERIALS; MAGNETIC FIELD EFFECTS; MAGNETIC SEMICONDUCTORS; MAGNETIZATION; NANOSTRUCTURES;

GATE VOLTAGE; OHMIC REGIME; SPIN-ORBIT EFFECTS;

MAGNETORESISTANCE;

EID: 36048941765     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2007.03.058     Document Type: Article

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