Advanced CMOS process for floating gate field-effect transistors in bioelectronic applications

Sensors and Actuators, B: Chemical

Volumn 128, Issue 1, 2007, Pages 208-217

  Meyburg, Sven ^a   Stockmann, Regina ^a   Moers, Jürgen ^a   Offenhäusser, Andreas ^a   Ingebrandt, Sven ^a  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

Complementary metal oxide semiconductor (CMOS); Extracellular recording; Feed line passivation; Field effect transistor (FET); Floating gate; Low pressure chemical vapour deposition (LPCVD)

Indexed keywords

CELL CULTURE; ELECTROLYTES; FIELD EFFECT TRANSISTORS; MICROFABRICATION; PASSIVATION; SENSORS; SIGNAL TO NOISE RATIO;

BIOELECTRONIC APPLICATIONS; COMPLEMENTARY METAL OXIDE SEMICONDUCTOR (CMOS); HUMAN EMBRYONIC KIDNEY (HEK);

CMOS INTEGRATED CIRCUITS;

EID: 35748961409     PISSN: 09254005     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.snb.2007.06.003     Document Type: Article

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