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Volumn 91, Issue 17, 2007, Pages
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An atomic level model for silicon anisotropic etching processes: Cellular automaton simulation and experimental verification
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Author keywords
[No Author keywords available]
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Indexed keywords
CELLULAR AUTOMATA;
COMPUTER SIMULATION;
SILICON;
SURFACE PROPERTIES;
DYNAMIC ALGORITHM;
SIMULATION SYSTEMS;
SURFACE ATOMS;
ANISOTROPIC ETCHING;
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EID: 35548984893
PISSN: 00036951
EISSN: None
Source Type: Journal
DOI: 10.1063/1.2800884 Document Type: Article |
Times cited : (3)
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References (19)
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