Technology of metal oxide thin film deposition with interruptions

Surface and Coatings Technology

Volumn 202, Issue 3, 2007, Pages 453-459

  Khatko, V ^a   Calderer, J ^b   Vallejos, S ^a   Llobet, E ^a   Correig, X ^a  

^a UNIVERSITAT ROVIRA I VIRGILI   (Spain)

^b UNIVERSITAT POLITÈCNICA DE CATALUNYA   (Spain)

Author keywords

Deposition with interruptions; R.f. sputtering; Tungsten trioxide thin films properties

Indexed keywords

ATOMIC FORCE MICROSCOPY; GRAIN SIZE AND SHAPE; SILICON WAFERS; SPUTTER DEPOSITION; SURFACE MORPHOLOGY; TEMPERATURE; X RAY DIFFRACTION ANALYSIS;

METAL OXIDE THIN FILM DEPOSITION; TUNGSTEN TRIOXIDE THIN FILMS PROPERTIES;

THIN FILMS;

ATOMIC FORCE MICROSCOPY; GRAIN SIZE AND SHAPE; SILICON WAFERS; SPUTTER DEPOSITION; SURFACE MORPHOLOGY; TEMPERATURE; THIN FILMS; X RAY DIFFRACTION ANALYSIS;

EID: 35548938568     PISSN: 02578972     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.surfcoat.2007.06.007     Document Type: Article

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