Suppressing oxidization of hydrogen silsesquioxane films by using H2O plasma in ashing process

Proceedings of the IEEE 1998 International Interconnect Technology Conference, IITC 1998

Volumn 1998-June, Issue , 1998, Pages 48-50

  Tamaoka, E ^a   Ueda, T ^a   Aoi, N ^a   Mayumi, S ^a  

^a PANASONIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON BEAM LITHOGRAPHY; HYDROGEN; PHOTORESISTS; PLASMA APPLICATIONS;

ASHING PROCESS; HYDROGEN SILSESQUIOXANE; OXIDIZATION; PLASMA TREATMENT;

SILICON COMPOUNDS;

EID: 36749016295     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IITC.1998.704748     Document Type: Conference Paper

References (5)

1. H. Aoki, S. Y a m d, T. Usami Y. Tsuchiya, N. Ito, T. Onodera, et al., "A degradation-fie Cu/HSQ damaxme technology using metal mask patterning and postCMp cleaning by elec4ulyk ionized water, " in 1997 International E l a n Devices Meeting Technid Digest pp. 77-780
2. M. K Jain, KJ. Taylor, GA Dixit, W. W. Lee, LM. Tmg G. B. Shinn, et ai., "A novel high performance inteption scheme using fluorinatedsiOz and hydrogen sdsquioxane for capacitame reduction, " in F'medngs of 13th VMIC 1996 pp. 23-27
3. C. H. Hsieh and C. C. Hsu, "Implant treatment of hydmgen skequioxane and methyl siLsesquioxane spina polymer as interlayer dielectric material for NEB SOG and W-via pms, ':' in Pmedhgs of 13th VMIC 1996 pp. 583-589
4. B. T. Ahlbum, GA Brown, T. R. Seha and T. F. Zoes, "Hydrogen sdsequioxawbased flowable oxide as an element in the interlevel dielectric for sub 0. 5 micmn ULSI circuits, " in Pnxmhgs of 1st DUMIC 1995 pp. 3642
5. T. C. Chang YJ. Mei, Y. L Lin, SJ. Chang C. Y. Chang, W. Lur, et al., 'The novel improvement of low dielectric constant hydrogen sllsesquioxane using hydmgen plasma treatment, " in Pmmhgs of 3rd DUMIC 1997 pp. 337-340