Structural properties of pulsed laser deposited zinc oxide thin films annealed at various temperatures

Surface Engineering

Volumn 23, Issue 3, 2007, Pages 230-233

  Rusop, M ^a   Uma, K ^b   Soga, T ^b   Jimbo, T ^b  

^a UNIVERSITI TEKNOLOGI MARA   (Malaysia)

^b NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Anneal; C axis; Crystal structure; Deposition process; Orientation; PLD; Wurtize structure; ZnO

Indexed keywords

BAND STRUCTURE; EXCIMER LASERS; PULSED LASER DEPOSITION; SINGLE CRYSTALS; WAVELENGTH; X RAY DIFFRACTION ANALYSIS; ZINC OXIDE;

OXYGEN GAS PRESSURE; ROOM TEMPERATURE; WURTIZE CRYSTAL STRUCTURE;

THIN FILMS;

EID: 35348931006     PISSN: 02670844     EISSN: None     Source Type: Journal    
DOI: 10.1179/174329406X122964     Document Type: Article

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