Comparison of electrical properties between HfO2 films on strained and relaxed si1-x gex substrates

Electrochemical and Solid-State Letters

Volumn 10, Issue 12, 2007, Pages

  Park, Tae Joo ^a   Kim, Jeong Hwan ^a   Jang, Jae Hyuck ^a   Na, Kwang Duk ^a   Seo, Minha ^a   Hwang, Cheol Seong ^a   Won, Jeong Yeon ^b  

^a Seoul National University   (South Korea)

^b Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITION; DIFFUSION; ELECTROCHEMICAL PROPERTIES; FILM THICKNESS; GERMANIUM; HAFNIUM COMPOUNDS; PHYSICAL PROPERTIES;

CAPACITANCE EQUIVALENT THICKNESS; DENSIFICATION OF THE FILM; POSTDEPOSITION ANNEALING (PDA);

OXIDE FILMS;

EID: 35348878499     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2787871     Document Type: Article

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