Forward transfer of thin-film devices to flexible substrates by applying thermal stress

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 46, Issue 10 A, 2007, Pages 6469-6473

  Yoshioka, Kazuya ^a   Sameshima, Toshiyuki ^a   Iwasaki, Tomoya ^a   Takechi, Kazushige ^b  

^a TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY   (Japan)

^b Technology Research Association for Advanced Display Materials TRADIM   (Japan)

Author keywords

Germanium dioxide; High rate etching; Thermal stress; Transfer

Indexed keywords

ETCHING; HEAT TRANSFER; SEMICONDUCTING FILMS; SUBSTRATES; THERMAL STRESS;

GERMANIUM DIOXIDE; HIGH-RATE ETCHING;

THIN FILM DEVICES;

EID: 35348877838     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.46.6469     Document Type: Article

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