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Volumn 186, Issue 4, 1998, Pages 487-493

Characterization of InP grown by LEC using glassy carbon, silica and PBN crucibles

(7) De Oliveira, C E M a De Carvalho, M M G b Mendonca C A C b Miskys, C R c Guadalupi, G M d Battagliarin, M d Bueno, M I M S b

a UNIVERSIDADE SÃO FRANCISCO (Brazil)

b UNIVERSITY OF CAMPINAS (Brazil)

c WALTER SCHOTTKY INSTITUT (Germany)

d ENI S P A (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

BORON COMPOUNDS; CRYSTAL GROWTH FROM MELT; CRYSTAL IMPURITIES; ELECTRIC CONDUCTIVITY MEASUREMENT; GLOW DISCHARGES; MASS SPECTROMETRY; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SILICA; SINGLE CRYSTALS;

LIQUID ENCAPSULATED CZOCHRALSKI METHOD; PYROLITIC BORON NITRIDE CRUCIBLES;

SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 0032048331 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(97)00815-4 Document Type: Article

Times cited : (7)

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