Investigation of compensation defect centres in semi-insulating InP crystals

EPJ Applied Physics

Volumn 27, Issue 1-3, 2004, Pages 171-175

  Kaminski, P ^a   Pawlowski, M ^a,b   Kozlowski R ^a   Surma, B ^a   Dubecky, F ^c   Yamada, M ^d   Fnkuzawa, M ^d  

^a ukasiewicz Research Network Institute of Microelectronics and Photonics   (Poland)

^b MILITARY UNIVERSITY OF TECHNOLOGY   (Poland)

^c INSTITUTE OF ELECTRICAL ENGINEERING   (Slovakia)

^d KYOTO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ANNEALING; CONTAMINATION; DOPING (ADDITIVES); IMPURITIES; IRON; LAPLACE TRANSFORMS; PHOSPHORUS; SILICON; VAPOR PRESSURE;

CONDUCTION BAND; DEFECT CLUSTERS; III-V SEMICONDUCTOR; LAPLACE TRANSFORM PHOTOINDUCED TRANSIENT SPECTROSCOPY (LTPITS);

POINT DEFECTS;

EID: 10244220960     PISSN: 12860042     EISSN: None     Source Type: Journal    
DOI: 10.1051/epjap:2004119-1     Document Type: Conference Paper

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