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IEEE Transactions on Electron Devices

Volumn 48, Issue 8, 2001, Pages 1492-1497

Electrical properties and transport mechanisms of InP/InGaAS HBTs operated at low temperature

(2) Wang, Hong a,b Ng, Geok Ing a,b

a IEEE (Singapore)

b NANYANG TECHNOLOGICAL UNIVERSITY (Singapore)

Author keywords

Heterojunction bipolar transistors; Indium phosphide; Low temperature; Semiconductor device measurement; Transistors

Indexed keywords

CARRIER TRANSPORT; LIQUID HELIUM TEMPERATURE; SEMICONDUCTOR DEVICE MEASUREMENT; SHOCKLEY-READ-HALL RECOMBINATION;

ELECTRIC PROPERTIES; ELECTRON TRANSPORT PROPERTIES; ELECTRON TUNNELING; INTEGRATED CIRCUIT LAYOUT; LOW TEMPERATURE OPERATIONS; OPTIMIZATION; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MODELS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0035424365 PISSN: 00189383 EISSN: None Source Type: Journal
DOI: 10.1109/16.936496 Document Type: Article

Times cited : (18)

References (16)

1
- 0031258456
- A 50-MHzz-55-GHz multidecade InP-based HBT distributed amplifier
- Oct.
- (1997) IEEE Microwave Guided Wave Lett. , vol.7 , pp. 353-355
- Kobayashi, K.W.¹ Cowles, J.² Tran, L.T.³ Gutierrez-Aitken, A.⁴ Block, T.R.⁵ Oki, A.K.⁶ Streit, D.C.⁷

2
- 0032639168
- Transferred-substrate heterojunction bipolar transistor integrated circuit technology
- (1999) Proc. 11th Int. Conf. Indium Phosphide Related Material , pp. 169-174
- Rodwell, M.¹ Lee, Q.² Mensa, D.³ Guthrie, J.⁴ Betser, Y.⁵ Martin, S.C.⁶ Smith, R.P.⁷ Jaganathan, S.⁸ Mathew, T.⁹ Krishnan, P.¹⁰ Serhan, C.¹¹ Long, S.¹²

3
- 0033345385
- A dc-3 GHz cryogenic AlGaAs/GaAs HBT low noise MMIC amplifier with 0.15 dB noise figure
- (1999) IEDM Tech. Dig. , pp. 775-778
- Kobayashi, K.W.¹ Fernandez, J.E.² Kobayashi, J.H.³ Leung, M.⁴ Oki, A.K.⁵ Tran, L.T.⁶ Lammert, M.⁷ Block, T.R.⁸ Streit, D.C.⁹

4
- 0024055906
- Optimization of silicon bipolar transistor for high current gain at low temperature
- Aug.
- (1988) IEEE Trans. Electron Devices , vol.35 , pp. 1311-1321
- Woo, J.C.S.¹ Plummer, J.D.²

5
- 0000663424
- Temperature dependence of current gain in AlGaAs/GaAs heterojunction bipolar transistors
- (1984) Appl. Phys. Lett. , vol.45 , pp. 1086-1089
- Chand, N.¹ Fisher, R.² Henderson, T.³ Klem, J.⁴ Kopp, W.⁵ Morkoc, H.⁶

6
- 0001659547
- Comparison of compositionally graded to abrupt emitter-base junction used in the heterojunction bipolar transistors
- (1987) J. Appl. Phys. , vol.61 , pp. 2663-2669
- Enquist, P.M.¹ Ramberg, L.R.² Eastman, L.F.³

7
- 0023293402
- Transport and related properties of (Ga,Al)As/GaAs double heterojunction bipolar transistors
- Feb.
- (1987) IEEE Trans. Electron Devices , vol.34 ED , pp. 185-198
- Tiwari, S.¹ Wright, S.L.² Kleinsasser, A.W.³

8
- 0027656412
- Temperature dependence of dc and RF characteristics of AlInAs/GaInAs HBTs
- Sept.
- (1993) IEEE Trans. Electron Devices , vol.40 , pp. 1583-1588
- Hafizi, M.¹ Stanchina, W.E.² Metzger, R.A.³ Macdonald, P.A.⁴ Willaims F., Jr.⁵

9
- 0028422743
- Temperature dependent dc characteristics of an InP/InGaAs/InGaAsP HBT
- May
- (1994) IEEE Electron Device Lett. , vol.15 , pp. 178-180
- Abid, Z.¹ McAlister, S.P.² McKinnin, W.R.³ Guzzo, E.E.⁴

10
- 0029732426
- Temperature dependent study of carbon-doped InP/InGaAs HBTs
- Jan.
- (1996) IEEE Electron Device Lett. , vol.12 , pp. 10-12
- Kruse, J.¹ Mares, P.J.² Scherrer, D.³ Feng, M.⁴ Stillman, G.E.⁵

11
- 0000744721
- Use of dipole doping to suppress switching in indium phosphide double heterojunction bipolar transistors
- (1997) J. Appl. Phys. , vol.82 , pp. 5231-5234
- McAlist, S.P.¹ Mckinnon, W.R.² Driad, R.³ Renaud, A.P.⁴

12
- 0004393054
- Quantum interference effects in GaAs/GaAlAs bulk potential barriers
- (1988) Appl. Phys. Lett. , vol.52 , pp. 1578-1580
- Hayes, J.R.¹ England, P.² Harbison, J.P.³

13
- 0024051719
- Numerical study of emitter-base junction design for AlGaAs/GaAs heterojunction bipolar transistors
- July
- (1988) IEEE Trans. Electron Devices , vol.35 , pp. 863-870
- Das, A.¹ Lundstrom, M.S.²

14
- 0031270979
- Analytical expressions for the tunnel current at abrupt semiconductor-semiconductor heterojunctions
- Nov.
- (1997) IEEE Trans. Electron Devices , vol.44 , pp. 1851-1856
- Searles, S.¹ Pulfrey, D.L.² Kleckner, T.C.³

15
- 0023089947
- Non-ideal base current in bipolar transistor at low temperatures
- Jan.
- (1987) IEEE Trans. Electron Devices , vol.34 , pp. 130-138
- Woo, J.C.S.¹ Plummer, J.D.² Stork, J.M.C.³

16
- 84918009931
- New York: Academic
- (1971) Semiconductors and Semimetals , vol.7 , Issue.PART A
- Padovani, F.A.¹

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