Photoluminescence studies of neutron-transmutation-doped InP:Fe

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 147, Issue 1-4, 1999, Pages 175-180

  Mari B ^a   Hernandez M A ^a   Navarro, F J ^a   Fornari, R ^b  

^a UNIVERSITAT POLITÈCNICA DE VALÈNCIA   (Spain)

^b CNR   (Italy)

Author keywords

Defects; Hall effect; InP; NTD; Photoluminescence

Indexed keywords

ANNEALING; CARRIER CONCENTRATION; CRYSTAL DEFECTS; CRYSTALS; HALL EFFECT; INSULATING MATERIALS; IRON; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DOPING;

NEUTRON TRANSMUTATION DOPING; SEMI INSULATING CRYSTAL;

NEUTRON IRRADIATION;

EID: 0032714699     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(98)00580-1     Document Type: Article

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