Optimization of TaSix absorber stack for EUV mask

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6283 I, Issue , 2006, Pages

  Tamura, Shinpei ^a   Kanayama, Koichiro ^a   Nishiyama, Yasushi ^a   Matsuo, Tadashi ^a   Tamura, Akira ^a  

^a TOPPAN PRINTING CO LTD   (Japan)

Author keywords

Absorber; Blanks; EUVL; Mask; Reticle

Indexed keywords

ANISOTROPY; HALOGEN ELEMENTS; OPTICAL PROPERTIES; OPTIMIZATION; ULTRAVIOLET RADIATION;

ABSORBER; BLANKS; EUVL; RETICLE;

MASKS;

EID: 33748037388     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.681842     Document Type: Conference Paper

References (5)

1. T. Abe et al., Evaluation of dry etching and defect repair of EUVL mask, SPIE vol.5567, pp.1435, 2004
2. M.Kureishi et al., Development of low damage mask making process on EUV mask with thin CrN buffer layer, SPIE 5751-14, 2005
3. H. Seitz et al., Recent results on EUV mask blank multilayers and absorbers, SPIE 5751-18, 2005
4. K. Lee et al., Magnetron reactive sputtering of TaN and TaON films for EUV-mask applications, SPIE 5992-84, 2005
5. M. Yanagihara et al., Optical constants of very thin gold films in the soft x-ray region, Applied Optics, pp.2807, 1991