Transferred electron effect in AlGaAs/GaAs multi-quantum-well structures

European Solid-State Device Research Conference

Volumn , Issue , 1997, Pages 296-299

  Springer, A L ^a   Diskus, C G ^a   Lubke K ^a   Stelzer, A ^a   Thim, H W ^a  

^a JOHANNES KEPLER UNIVERSITY LINZ   (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

MONOLITHIC INTEGRATED CIRCUITS;

ACTIVE LAYER; ALGAAS/GAAS; DOPED DEVICES; MONOLITHICALLY INTEGRATED; MULTI-QUANTUM WELL STRUCTURES; OUTPUT POWER; QUANTUM WELL STRUCTURES; TRANSFERRED-ELECTRON EFFECTS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0004628983     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.1997.194424     Document Type: Conference Paper

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