Gunn instabilities in power HEMTs

Electronics Letters

Volumn 37, Issue 8, 2001, Pages 530-531

  Dunn, G M ^a   Phillips, A ^b   Topham, P J ^b  

^a UNIVERSITY OF ABERDEEN   (United Kingdom)

^b Marconi Materials Technology Ltd   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENT CONTROL; HIGH ELECTRON MOBILITY TRANSISTORS; MONTE CARLO METHODS; POWER INTEGRATED CIRCUITS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DEVICE TESTING; SEMICONDUCTOR DOPING;

ALUMINUM GALLIUM ARSENIDE TRANSISTORS; GUNN INSTABILITY; POWER TRANSISTORS; TRANSVERSE GUNN DIPOLES;

GUNN EFFECT;

EID: 0035848673     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20010362     Document Type: Article

References (5)

1. MOGLESTUE, C.: 'Monte Carlo study of transport along the hetero interface in a field effect transistor', Eur. Trans. Telecommun., Related Tech., 1, 1990, pp. 439
2. DUNN, G.M., REES, G.J., and DAVID, J.P.R.: 'Simulation of impact ionisation breakdown in MESFETs', Semicond. Sci. Technol., 1997, 12, pp. 1147
3. FISCHETTI, M.V.: 'Monte Carlo simulation of transport in technologically significant semiconductors', IEEE Trans. Electron Devices, 1991, 38, pp. 634
4. ADACHI, S.: 'GaAs AlAs and AlGaAs material parameters for use in research and device applications', J. Appl. Phys., 1985, 58, pp. R1
5. PARK, D.H., and BRENNAN, K.F.: 'Theoretical analysis of an AlGaAs/ InGaAs pseudomorphic HEMT using an ensemble Monte Carlo simulation', IEEE Trans. Electron Devices, 1989, 36, pp. 1254