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Volumn 51, Issue 3, 2007, Pages 1027-1031

Formation and characteristics of self-assembled InGaN/GaN quantum-dot structure grown by using plasma-assisted molecular beam epitaxy

Author keywords

Indium gallium nitride; Photoluminescence; Plasma assisted molecular beam epitaxy; Quantum dot

Indexed keywords


EID: 34948856964     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: 10.3938/jkps.51.1027     Document Type: Article
Times cited : (6)

References (24)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.