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Japanese Journal of Applied Physics, Part 2: Letters

Volumn 40, Issue 3 B, 2001, Pages 1892-1895

Self-Assembled GaN Quantum Dots Grown by Plasma-Assisted Molecular Beam Epitaxy

(12) Daudin, Bruno a,b Feuillet, Guy a Mula, Guido a Pelekanos, Nikolaos a Molva, Engin a Rouvière, Jean Luc a Adelmann, Christoph a Martinez Guerrero, Esteban a Barjon, Julien a Chabuel, Francis a Bataillou, Benoit a Simon, Julia a

a CEA GRENOBLE (France)

b UNIV GRENOBLE ALPES (France)

Author keywords

III V nitrides; Localization; Molecular beam epitaxy; Quantum dots; Stranski Krastanov growth mode

Indexed keywords

ATOMIC FORCE MICROSCOPY; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH; TRANSMISSION ELECTRON MICROSCOPY;

STRANSKI-KRASTANOV GROWTH MODES;

SEMICONDUCTOR QUANTUM DOTS;

EID: 17644438343 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.40.1892 Document Type: Article

Times cited : (27)

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