The influence of a continuum background on carrier relaxation in InAs/InGaAs quantum dot

Nanoscale Research Letters

Volumn 2, Issue 10, 2007, Pages 509-511

  Rainò, Gabriele ^a   Visimberga, Giuseppe ^b   Salhi, Abdelmajid ^a   Todaro, Maria T ^a   De Vittorio, Massimo ^a   Passaseo, Adriana ^a   Cingolani, Roberto ^a   De Giorgi, Milena ^a  

^a NATIONAL NANOTECHNOLOGY LABORATORY   (Italy)

^b UNIVERSITY COLLEGE CORK   (Ireland)

Author keywords

Carrier relaxation; Quantum dots; Ultra fast spectroscopy

Indexed keywords

BARRIER LAYERS; CARRIER RELAXATION; TIME RESOLVED PHOTOLUMINESCENCE (TRPL); ULTRA FAST SPECTROSCOPY; UPCONVERSION MEASUREMENTS;

CARRIER CONCENTRATION; ELECTRONIC STATES; EXCITONS; INDIUM ARSENIDE; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

SEMICONDUCTOR QUANTUM DOTS;

EID: 34848832128     PISSN: 19317573     EISSN: 1556276X     Source Type: Journal    
DOI: 10.1007/s11671-007-9092-2     Document Type: Article

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