Broad optical bandwidth InGaAs-InAlGaAs light-emitting diodes fabricated using a laser annealing process

IEEE Photonics Technology Letters

Volumn 11, Issue 12, 1999, Pages 1557-1559

  McDougall, S D ^a   Kowalski, O P ^a   Marsh, J H ^a   Aitchison, J S ^a  

^a UNIVERSITY OF GLASGOW   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BANDWIDTH; EMISSION SPECTROSCOPY; ENERGY GAP; LASER APPLICATIONS; LASER BEAM EFFECTS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR QUANTUM WELLS;

FULL WIDTH AT HALF MAXIMUM (FWHM);

LIGHT EMITTING DIODES;

EID: 0033335035     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.806845     Document Type: Article

References (9)

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