Reduction of defects propagating into 3C-SiC homoepilayers by reactive ion etching of 3C-SiC heteroepilayer substrates

Journal of Crystal Growth

Volumn 308, Issue 1, 2007, Pages 50-57

  Yun, Jungheum ^a   Takahashi, Tetsuo ^a   Kuroda, Satoshi ^a   Ishida, Yuuki ^a   Okumura, Hajime ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

A1. Defects; A1. Growth models; A3. Chemical vapor deposition processes; Al. Crystal morphology; B2. Semiconducting silicon compounds

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYSTAL DEFECTS; REACTIVE ION ETCHING; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE; SURFACE MORPHOLOGY;

CRYSTAL MORPHOLOGY; FREE-STANDING HETEROEPILAYERS; GROWTH MODELS; HETEROEPILAYER SUBSTRATES;

EPILAYERS;

EID: 34748838921     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2007.06.036     Document Type: Article

References (9)

1. Yun J., Takahashi T., Ishida Y., and Okumura H. J. Crystal Growth 291 (2006) 140
2. Ishida Y., Kushibe M., Takahashi T., Okumura H., and Yoshida S. Mater. Sci. Forum 389-393 (2002) 459
3. Püsche R., Hundhausen M., Ley L., Semmelroth K., Schmid F., Pensl G., and Nagasawa H. J. Appl. Phys. 96 (2004) 5569
4. Nagasawa H., Yagi K., Kawahara T., Hatta N., and Abe M. Microelectron. Eng. 83 (2006) 185
5. Nagasawa H., Yagi K., and Kawahara T. J. Crystal Growth 237-239 (2002) 1244
6. Takahashi T., Ishida Y., Tsuchida H., Kamata I., Okumura H., Yoshida S., and Arai K. Mater. Sci. Forum 389-393 (2002) 323
7. Nagasawa H., Yagi K., Kawahara T., and Hatta N. Chem. Vap. Depos. 12 (2006) 502
8. Yun J., Takahashi T., Mitani T., Ishida Y., and Okumura H. J. Crystal Growth 291 (2006) 148
9. Bahng W., Matsuhata H., Takahashi T., Ishida Y., Okumura H., Yoshida S., Sawada H., and Ichinose H. Inst. Phys. Conf. Ser. 164 (1999) 331