Investigation of the relationship between defects and electrical properties of 3C-SiC epilayers

Materials Science Forum

Volumn 389-393, Issue , 2002, Pages 459-462

  Ishida, Y ^a   Kushibe, M ^a   Takahashi, T ^a   Okumura, H ^a   Yoshida, S ^b  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b SAITAMA UNIVERSITY   (Japan)

Author keywords

3C SiC; Defects; Macrosteps; Schottky barrier junctions; Stacking faults; Twin band

Indexed keywords

DEFECTS; ELECTRIC CURRENTS; EPILAYERS; SCHOTTKY BARRIER DIODES; STACKING FAULTS; TRANSMISSION ELECTRON MICROSCOPY;

3C-SIC; DIFFERENTIAL INTERFERENCE CONTRAST MICROSCOPY; ELECTRON-BEAM-INDUCED CURRENT; MACROSTEPS; REVERSE CURRENTS; SCHOTTKY BARRIERS; SUBSTRATE SURFACE; TWIN BAND;

SILICON CARBIDE;

EID: 8744257748     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028hnnwscientific.net/MSF.389-393.459     Document Type: Conference Paper

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