250 nm InGaAs/InP DHBTs w/650 GHz fmax and 420 GHz fτ, operating above 30 mW/μm2

Device Research Conference - Conference Digest, DRC

Volumn , Issue , 2006, Pages 3-4

  Lind, Erik ^a   Griffith, Zach ^a   Rodwell, Mark J W ^a   Fang, Xiao Ming ^b   Loubychev, Dmitri ^b   Wu, Yu ^b   Fastenau, Joel M ^b   Liu, Amy W K ^b  

^a University of California   (United States)

^b IQE INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 36048984050     PISSN: 15483770     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. Z. Griffith et al., IEEE Electron Device Letters, vol. 26, no. 1, 2005, pp. 11-13
2. D. Sawdai at al.,Proc. Device Research Conference, Notre Dame, IN, June 11-13, 2004, Late news
3. T. Enoki et al., InternationalJournal of High Speed Electronics and Systems, Vol. 11,No. 1, pp. 137-158,2001
4. M. J.W. Rodwell et al., IEEE Trans. Electron Devices, Vol. 48, No. 11, 2001, pp. 2606-2624