Sidewall restoration of porous ultra low-k dielectrics for sub-45 nm technology nodes

Microelectronic Engineering

Volumn 84, Issue 11, 2007, Pages 2595-2599

  Chaabouni, H ^a,d   Chapelon, L L ^a   Aimadeddine, M ^a   Vitiello, J ^b   Farcy, A ^a   Delsol, R ^b   Brun, P ^c   Fossati, D ^a   Arnal, V ^a   Chevolleau, T ^d   Joubert, O ^d   Torres, J ^a  

^a STMICROELECTRONICS   (France)

^b NXP SEMICONDUCTORS   (France)

^c CEA LETI   (France)

^d Laboratoire Interdisciplinaire de Physique   (France)

Author keywords

HMDS; Plasma damage; Porous ULK; Restoration; Silylation

Indexed keywords

DIELECTRIC MATERIALS; ELECTRICAL ENGINEERING; ETCHING; NITROGEN COMPOUNDS;

ETCHING INTEGRATION STEPS; PLASMA ASHING; PLASMA DAMAGE; ULTRA LOW-K (ULK) MATERIAL;

POROUS MATERIALS;

EID: 34548846368     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2007.05.029     Document Type: Article

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