Stress evolution during Ni-Si compound formation for fully silicided (FUSI) gates

Microelectronic Engineering

Volumn 84, Issue 11, 2007, Pages 2533-2536

  Torregiani, C ^a,b   Van Bockstael, C ^c   Detavernier, C ^c   Lavoie, C ^d   Lauwers, A ^a   Maex, K ^a,b   Kittl, J A ^e  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

^c GHENT UNIVERSITY   (Belgium)

^d IBM T J WATSON RESEARCH CENTER   (United States)

^e Kapeldreef 75   (Belgium)

Author keywords

In situ curvature measurements; In situ XRD; Ni silicides

Indexed keywords

DEPOSITS; NICKEL; OXIDATION; SILICON;

CORRESPONDING VOLUME CHANGES; FULLY SILICIDED (FUSI) GATES; IN SITU CURVATURE MEASUREMENTS;

STRESS ANALYSIS;

EID: 34548840260     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2007.05.054     Document Type: Article

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