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Volumn , Issue , 2007, Pages 2786-2789

Hardened by design techniques for implementing multiple-bit upset tolerant static memories

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTATIONAL COMPLEXITY; LOGIC DESIGN;

EID: 34548834735     PISSN: 02714310     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/iscas.2007.378631     Document Type: Conference Paper
Times cited : (26)

References (14)
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  • 2
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  • 3
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    • Analysis of multiple bit upsets (MBU) in CMOS SRAM
    • Dec
    • O. Musseau et al., "Analysis of multiple bit upsets (MBU) in CMOS SRAM", IEEE Trans. on Nuclear Science, vol. 43, no. 6, pp. 2879-2888, Dec. 1996.
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    • Musseau, O.1
  • 4
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    • Single-word multiple-bit upsets in static random access devices
    • Dec
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    • Analysis of single-ion multiple-bit upset in high-density DRAMs
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    • Makihara, A.1
  • 6
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    • Monte-Carlo simulations to quantify neutron-induced multiple bit upsets in advanced SRAMs
    • Oct
    • T. Merelle et al., "Monte-Carlo simulations to quantify neutron-induced multiple bit upsets in advanced SRAMs," IEEE Trans. on Nuclear Science, vol. 52, no. 5, pp. 1538-1544, Oct. 2005.
    • (2005) IEEE Trans. on Nuclear Science , vol.52 , Issue.5 , pp. 1538-1544
    • Merelle, T.1
  • 7
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    • Investigation of single-ion multiple-bit upsets in memories on board a space experiment
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.