Electron mobility enhancement in STRAINED-Germanium NMOSFETs and impact of strain engineering in ballistic regime

International Symposium on VLSI Technology, Systems, and Applications, Proceedings

Volumn , Issue , 2007, Pages

  Yang, Y J ^a   Chang, S T ^b   Liu, C W ^a  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^b NATIONAL CHUNG HSING UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; OPTIMIZATION; SEMICONDUCTING GERMANIUM; STRAIN MEASUREMENT;

BALLISTIC REGIMES; BALLISTIC SATURATION; CHANNEL DIRECTION;

MOSFET DEVICES;

EID: 34548815012     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/VTSA.2007.378950     Document Type: Conference Paper

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