Comparative study of novel barrier layers in ULSI copper interconnects

Microelectronic Engineering

Volumn 84, Issue 11, 2007, Pages 2486-2490

  Wang, Kai ^a,b   Horsfall, Alton ^b   Cuthbertson, Alan ^a   Bull, Steve ^b   O'Neill, Anthony ^b  

^a Atmel North Tyneside Ltd   (United Kingdom)

^b NEWCASTLE UNIVERSITY   (United Kingdom)

Author keywords

CVD W based barriers; Ta TaN barriers; ULSI

Indexed keywords

COPPER ALLOYS; ELECTROMIGRATION; GRAIN SIZE AND SHAPE; TANTALUM ALLOYS; TENSILE STRESS;

CONFORMAL LAYER; NOVEL BARRIER LAYERS; STRESS MIGRATION; ULSI COPPER INTERCONNECTS;

ULSI CIRCUITS;

EID: 34548814977     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2007.05.018     Document Type: Article

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