Advanced plasma and advanced gate dielectric - A charging damage prospective

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2006, Pages 360-364

  Cheung, Kin P ^a  

^a RUTGERS UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 34250733491     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2006.251244     Document Type: Conference Paper

References (17)

1. K. P. Cheung, Plasma Charging Damage, Springer-Verlag, London, 2001. ISBN 1-85233-144-5.
2. J. H. Stathis, D. J. "Reliability projection for ultra-thin oxides at low voltage." Technical Digest - International Electron Devices Meeting, 1998, p 167-170
3. R. Degraeve, B. Kaczer, G. Groeseneken, "Ultra-thin oxide reliability: Searching for the thickness scaling limit." Microelectronics and Reliability, 40(4-5), 697(2000).
4. P. W. Mason, K. P. Cheung, D. K. Hwang, M. Creusen, R. Degraeve and B. Kaczer, "Quantitative yield and reliability projection from antenna test results - A case study.", Tech. Digest, VLSI Technology Symp. 2000, p96.
5. P.W. Mason, D. DeBusk, J.K. McDaniel, A.S. Oates, K. P. Cheung, "Relationship Between Yield and Reliability Impact of Plasma Damage to Gate Oxide." IEEE International Symp. Plasma & Process Induced Damage, (P2ID), 2000, p2.
6. R. Degraeve, G. Groseneken, R. Bellens, J. L. Ogier, M. Depas, P. J. Roussel, H. Maes, "New Insights in the Relation Between Electron Trap Generation and the Statistical Properties of Oxide Breakdown." IEEE Trans. Electron Dev. 45(4), 904(1998).
7. T. Nigam, R. Degraeve, G. Groeseneken, M. M. Heyns, H. E. Maes, "Constant current charge-to-breakdown: Still a valid tool to study the reliability of MOS structures?" Proceedings, IEEE International Reliability Physics Symposium 1998. Page(s):62-69
8. 2 films." Science and Technology of Advanced Materials 1(3), 181(2000).
9. 2 dielectric breakdown mechanism studied by the post-breakdown resistance statistics." Semiconductor Science and Technology 15(5), 471(2000).
10. M. A. Alam, B. E. Weir, et al. "The statistical distribution of percolation resistance as a probe into the mechanics of ultra-thin oxide breakdown." Tech. Digest, IEEE International Electron Devices Meeting, 2000, p529.
11. K. P. Cheung, Philip Mason, David Hwang, "Plasma charging damage of ultra-thin gate-oxide - The measurement dilemma", Proceedings, IEEE International Symp. Plasma & Process Induced Damage, (P2ID), 2000, p10.
12. J. S. Suehle, B. Zhu, et al. "Detailed study and projection of hard breakdown evolution in ultra-thin gate oxides." Microelectronics Reliability 45(3-4), 419(2005).
13. G. Van den bosch, M. Creusen, et al. "Anomalously weak antenna ratio dependence of plasma process-induced damage." Proceedings, IEEE International Symposium on Plasma Process-Induced Damage (P2ID), 2000 p6.
14. G. Van den Bosch, B. De Jaeger, G. Groeseneken, "Evaluation procedure for fast and realistic assessment of plasma charging damage in thin oxides", Proceedings, IEEE International Symp. Plasma & Process Induced Damage (P2ID), 2002, p37.
15. K. P. Cheung, "Soft breakdown in thin gate oxide - a measurement artifact", Proceedings IEEE International Reliability Physics Symposium (IRPS), 2003, p432.
16. K. P. Cheung, "Ultra thin gate oxide breakdown - the reversibility at low voltage." IEEE Trans. Device & Material reliab., in press.
17. K. P. Cheung, "Impact of ESD protection device trigger transient on the reliability of ultra-thin gate-oxide", Microelectronics Reliab., 41, 745(2001).