Plasma-Damaged Oxide Reliability Study Correlating Both Hot-Carrier Injection and Time-Dependent Dielectric Breakdown

IEEE Electron Device Letters

Volumn 14, Issue 2, 1993, Pages 91-93

  Li, Xiaoyu ^a   Hsu, Jen Tai ^a   Aum, Paul ^b   Chan, David ^b   Rembetski, J ^b   Viswanathan, C R ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b SEMATECH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 3643064024     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.215118     Document Type: Article

References (7)

1. K. H. Rydén, H. Norström, C. Nender, and S. Berg, “Oxide breakdown due to charge accumulation during plasma etching,” J. Electrochem. Soc., vol. 134, p. 3113, 1987.
2. K. Tsunokuni, K. Nojiri, S. Kuboshima, and K. Hirobe, “The effect of charge build-up on gate oxide breakdown during dry etching,” in Extended Abstr. 19th Conf. Solid State Devices Mater., (Tokyo), 1987, p. 195.
3. S. Fang and J. P. McVittie, “A model and experiments for thin oxide damage from wafer charging in magnetron plasmas,” IEEE Electron Device Lett., vol. 13, p. 347, 1992.
4. C. Hu et al., “Hot-electron-induced MOSFET degradation-Model, monitor, and improvement,” IEEE Trans. Electron Devices, vol. ED-32, p. 375, 1985.
5. I. C. Chen and C. Hu, “Accelerated testing of time-dependent breakdown of SiO 2,” IEEE Electron Device Lett., vol. EDL-8, p. 140, 1987.
6. Z. H. Liu et al., “Field and temperature acceleration of time-dependent dielectric breakdown for reoxidized-nitrided and fluorinated oxides,” IEEE Electron Device Lett., vol. 13, p. 41, 1992.
7. R. Moazzami, J. C. Lee, and C. Hu, “Temperature acceleration of time-dependent dielectric breakdown,” IEEE Trans. Electron Devices, vol. 36, p. 2462, 1989.