Influence of phosphorus doping level and acid pretreatment on the voltammetric behavior of phosphorus incorporated tetrahedral amorphous carbon film electrodes

Electroanalysis

Volumn 19, Issue 17, 2007, Pages 1773-1778

  Liu, Aiping ^a   Zhu, Jiaqi ^a   Han, Jiecai ^a   Wu, Huaping ^a   Gao, Wei ^a  

^a HARBIN INSTITUTE OF TECHNOLOGY   (China)

Author keywords

Acid pretreatment; Cyclic voltammetry; Electrode; Phosphorus incorporation; Tetrahedral amorphous carbon film

Indexed keywords

AMORPHOUS CARBON; AMORPHOUS FILMS; CARBON FILMS; ELECTROCHEMICAL ELECTRODES; ELECTRON TRANSPORT PROPERTIES; PHOSPHORUS; PHOSPHORUS COMPOUNDS; PHOTOELECTRON SPECTROSCOPY; SEMICONDUCTOR DOPING; VACUUM APPLICATIONS;

ACID PRETREATMENT; CARBON FILM ELECTRODES; DOPING LEVELS; FILTERED CATHODIC VACUUM ARC; PHOSPHORUS DOPING; PHOSPHORUS INCORPORATED TETRAHEDRAL AMORPHOUS CARBON; PHOSPHORUS INCORPORATED TETRAHEDRAL AMORPHOUS CARBON (TA-C:P); PHOSPHORUS INCORPORATION; TETRAHEDRAL AMORPHOUS CARBON FILMS; VOLTAMMETRIC BEHAVIORS;

CYCLIC VOLTAMMETRY;

EID: 34548722713     PISSN: 10400397     EISSN: 15214109     Source Type: Journal    
DOI: 10.1002/elan.200703931     Document Type: Article

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