Substrate dependent low-temperature growth of thin Ag films: Study on Si(111)-In surfaces

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 46, Issue 9 A, 2007, Pages 5975-5980

  Uchihashi, Takashi ^a,b   Nakayama, Tomonobu ^a,b   Aono, Masakazu ^a,b  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

Critical thickness; Growth; Indium; Interface; Quantum size effects; Scanning tunneling microscopy; Silicon; Sliver; Surface reconstruction; Thin film

Indexed keywords

FILM GROWTH; INDIUM; INTERFACES (MATERIALS); SCANNING TUNNELING MICROSCOPY; SILICON; SURFACE RECONSTRUCTION; THIN FILMS;

CRITICAL THICKNESS; QUANTUM SIZE EFFECTS;

SILVER;

EID: 34548709154     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.46.5975     Document Type: Article

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