SCOPUS 정보 검색 플랫폼

Surface and Interface Analysis

Volumn 35, Issue 13 SPEC. ISS., 2003, Pages 1069-1072

Annealing of low-temperature growth in Ag/Si(111) as measured by RHEED spot profile analysis

(5) Kimberlin, K R a Rutter, G M a Nagle, L M a Roos, K R a Tringides, M C b

a BRADLEY UNIVERSITY (United States)

b IOWA STATE UNIVERSITY (United States)

Author keywords

MBE; RHEED; Si(111); Spot profile analysis

Indexed keywords

ANNEALING; ELECTRONIC PROPERTIES; EPITAXIAL GROWTH; MOLECULAR BEAM EPITAXY; OSCILLATIONS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SILICON; SURFACE PROPERTIES; ULTRATHIN FILMS; VECTORS;

ELECTRONIC GROWTH; MINIATURIZATION;

SILVER;

EID: 0346276979 PISSN: 01422421 EISSN: None Source Type: Journal
DOI: 10.1002/sia.1656 Document Type: Conference Paper

Times cited : (5)

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