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Volumn 376, Issue 1-3, 1997, Pages 1-12

Thickness-dependent morphologies of thin Ag films on GaAs(110) as revealed by LEED and STM

(4) Neuhold, G a Bartels, L a Paggel, J J a Horn, K a

a FRITZ HABER INSTITUT DER MAX PLANCK GESELLSCHAFT (Germany)

Author keywords

Epitaxy; Gallium arsenide; Low energy electron diffraction (LEED); Low index single crystal surfaces; Models of surface kinetics; Molecular beam epitaxy; Scanning tunneling microscopy; Silver; Surface structure, morphology, roughness, and topography

Indexed keywords

ANNEALING; COMPOSITION EFFECTS; ELECTRON ENERGY LEVELS; LOW ENERGY ELECTRON DIFFRACTION; MOLECULAR BEAM EPITAXY; MORPHOLOGY; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SILVER; SINGLE CRYSTALS; SURFACE PHENOMENA; SURFACE ROUGHNESS;

LOW INDEX SINGLE CRYSTAL SURFACES; SURFACE TOPOGRAPHY;

METALLIC FILMS;

EID: 0031121476 PISSN: 00396028 EISSN: None Source Type: Journal
DOI: 10.1016/S0039-6028(96)01393-3 Document Type: Article

Times cited : (29)

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