Effect of the Si substrate structure on the growth of two-dimensional thin Ag films

Surface Science

Volumn 518, Issue 1-2, 2002, Pages 63-71

  Jiang, C S ^a   Yu, Hongbin ^a   Shih, C K ^a   Ebert, Ph ^b  

^a UNIVERSITY OF TEXAS AT AUSTIN   (United States)

^b FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

Metal semiconductor interfaces; Metal semiconductor non magnetic thin film structures; Quantum effects; Scanning tunneling microscopy

Indexed keywords

METAL-SEMICONDUCTOR INTERFACES;

ANNEALING; DEPOSITION; FILM GROWTH; MORPHOLOGY; QUANTUM THEORY; SCANNING TUNNELING MICROSCOPY; SILICON; SUBSTRATES; SURFACE CHEMISTRY; THERMAL EFFECTS; THIN FILMS; WETTING;

SURFACE STRUCTURE;

EID: 0037057572     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(02)02090-3     Document Type: Article

References (22)

1. Smith A.R., Chao K.-J., Niu Q., Shih C.-K. Science. 273:1996;226.
2. Yu H., Jiang C.S., Ebert Ph., Wang X.D., White J.M., Niu Q., Zhang Z., Shih C.K. Phys. Rev. Lett. 88:2002;016102.
3. Zhang Z., Niu Q., Shih C.-K. Phys. Rev. Lett. 80:1998;5381.
4. Neuhold G., Bartels L., Paggel J.J., Horn K. Surf. Sci. 376:1997;1.
5. Evans M.M.R., Han B.Y., Weaver J.H. Surf. Sci. 465:2000;90.
6. Chao K.-J., Zhang Z., Ebert Ph., Shih C.-K. Phys. Rev. B. 60:1999;4988.
7. Ebert Ph., Chao K.-J., Niu Q., Shih C.-K. Phys. Rev. Lett. 83:1999;3222.
8. Jiang C.-S., Yu H.-B., Wang X.-D., Shih C.-K., Ebert Ph. Phys. Rev. B. 64:2001;235410.
9. Horn-von Hoegen M., Schmidt T., Henzler M., Meyer G., Winau D., Rieder K.H. Surf. Sci. 331-333:1995;575 Phys. Rev. B. 52:1995;10764.
10. Horn-von Hoegen M., Schmidt T., Henzler M., Meyer G., Winau D., Rieder K.H. Surf. Sci. 331-333:1995;575 Phys. Rev. B. 52:1995;10764.
11. Fölsch S., Meyer G., Winau D., Rieder K.H., Horn-von Hoegen M., Schmidt T., Henzler M. Phys. Rev. B. 52:1995;13745.
12. Gavioli L., Kimberlin K.R., Tringides M.C., Wendelken J.F., Zhang Z. Phys. Rev. Lett. 82:1999;129.
13. Meyer G., Rieder K.H. Surf. Sci. 331-333:1995;600.
14. Huang L., Chey S.J., Weaver J.H. Surf. Sci. 416:1998;L1101.
15. Matsuda I., Yeom H.W., Tanikawa T., Tono K., Nagao T., Hasegawa S., Ohta T. Phys. B. 63:2001;125325.
16. Hupalo M., Yeh V., Berbil-Bautista L., Kremmer S., Abram E., Tringides M.C. Phys. Rev. B. 64:2001;155307.
17. Liftshitz V.G., Saranin A.A., Zotov A.V. Surface Phases on Silicon. 1994;John Wiley and sons, Chichester.
18. Schottky W. Phys. Z. 41:1940;570.
19. Mott N.F. Proc. Cambridge Philos. Soc. 34:1938;568.
20. Mönch W. Semiconductor Surfaces and Interfaces. third ed. 2001;141 Springer, Berlin.
21. (a) Pervan P., Markert K., Wandelt K. Appl. Surf. Sci. 108:1997;307
22. (b) Nogami J., Baski A.A., Quate C.F. Phys. Rev. Lett. 65:1990;1611.