Destruction mechanism of PT and NPT-IGBTs in the short circuit operation - An estimation from the quasi-stationary simulations

IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)

Volumn , Issue , 2001, Pages 327-330

  Takata, I ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANODES; COMPUTER SIMULATION; CURRENT DENSITY; IMPACT IONIZATION; MATHEMATICAL MODELS; SHORT CIRCUIT CURRENTS; WAVEFORM ANALYSIS;

GATE VOLTAGES;

INSULATED GATE BIPOLAR TRANSISTORS;

EID: 0034822511     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

1. An experimental and numerical study on the forward biased SOA of IGBT's
2. Experimental study on plasma engineering in 6500V IGBTs
3. A high voltage IGBT and diode chip set designed for the 2.8kV DC link level with short circuit capability extending to the maximum blocking voltage
4. Investigation of the short-circuit performance of an IGBT
5. High voltage bipolar transistor with new concepts
6. The field stop IGBT (FS IGBT) - A new power device concept with a great improvement potential