Reverse-bias safe operation area of large area MCT and IGBT

Solid-State Electronics

Volumn 47, Issue 1, 2003, Pages 1-14

  Liu, Yin ^a,b   You, Budong ^a,c   Huang, Alex Q ^a  

^a VIRGINIA STATE UNIVERSITY   (United States)

^b Chrontel Inc   (United States)

^c Volterra Company   (United States)

Author keywords

IGBT; Large area; MCT; RBSOA

Indexed keywords

CURRENT DENSITY; ELECTRIC BREAKDOWN; ELECTRIC CONDUCTANCE; GATES (TRANSISTOR); INSULATED GATE BIPOLAR TRANSISTORS;

REVERSE-BIAS SAFE OPERATION AREA (RBSOA);

THYRISTORS;

EID: 0037210928     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(02)00310-6     Document Type: Article

References (9)

1. You B. Investigation of MOS-gated thyristors and power diodes, Ph.D dissertation, 2000.
2. Afridi K., Kassakian J. Turn-off failures in individual and paralleled MCTs. Proc. ISPSD 1993. p. 60-5.
3. Lendenmans H., Dettmer H., Krumbein U., Fichtner W. Approaching homogeneous switching of MCT devices: Experiment and simulation. Proc. ISPSD 1993. p. 66-70.
4. Lendenmans H., Fichtner W. Turn-off failure mechanisms in large (2.2 kV, 20 A) MCT devices. Proc. ISPSD 1994. p. 207-12.
5. Dettmer H., Lendenmans H., Burgler J., Muller S., Fichtner W. Turn-off behavior of structured MCT cells. Proc. EPE-MADEP, 1991. p. 258-61.
6. You B., Huang A. Theoretical limitation of the RBSOA of the MOS-controlled thyristors. Solid-State Electron. 42(5):1998;785-794.
7. MEDICI User's Manual, TMA, Sunnyvale, CA, February 1997.
8. Shekar M.S., Korec J., Baliga B.J. Trench gate emitter switched thyristors. Proc. ISPSD, 1994. p. 189-94.
9. Hurkx G.A.M., Koper N. A physics-based model for the avalanche ruggedness of power diodes, ISPSD, 1999. p. 169-72.