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Volumn 46, Issue 21, 2007, Pages 4763-4767

GaN-based distributed Bragg reflector for high-brightness LED and solid-state lighting

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM NITRIDE; LIGHT POLARIZATION; MATHEMATICAL MODELS; REFRACTIVE INDEX;

EID: 34548544897     PISSN: 1559128X     EISSN: 15394522     Source Type: Journal    
DOI: 10.1364/AO.46.004763     Document Type: Article
Times cited : (17)

References (12)
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  • 2
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    • Improved characteristics of InGaN multiple-quantum-well light-emitting diode by GaN/AlGaN distributed Bragg reflector grown on sapphire
    • N. Nakada, M. Nakaji, H. Ishikawa, T. Egawa, M. Umeno, and T. Jimbo, "Improved characteristics of InGaN multiple-quantum-well light-emitting diode by GaN/AlGaN distributed Bragg reflector grown on sapphire," Appl. Phys. Lett. 76, 1804-1806 (2000).
    • (2000) Appl. Phys. Lett , vol.76 , pp. 1804-1806
    • Nakada, N.1    Nakaji, M.2    Ishikawa, H.3    Egawa, T.4    Umeno, M.5    Jimbo, T.6
  • 3
    • 0001607822 scopus 로고    scopus 로고
    • Highly reflective GaN/ A10.34Ga0.66N quarter-wave reflectors grown by metal organic chemical vapor deposition
    • T. Someya and Y. Arakawa, "Highly reflective GaN/ A10.34Ga0.66N quarter-wave reflectors grown by metal organic chemical vapor deposition," Appl. Phys. Lett. 73, 3653-3655 (1998).
    • (1998) Appl. Phys. Lett , vol.73 , pp. 3653-3655
    • Someya, T.1    Arakawa, Y.2
  • 4
    • 0032614504 scopus 로고    scopus 로고
    • High-reflectivity GaN/GaAlN Bragg mirrors at blue/green wavelengths grown by molecular beam epitaxy
    • R. Langer, A. Barski, J. Simon, N. Pelekanos, O. Konovalov, R. Andre, and L. Dang, "High-reflectivity GaN/GaAlN Bragg mirrors at blue/green wavelengths grown by molecular beam epitaxy," Appl. Phys. Lett. 74, 3610-3612 (1999).
    • (1999) Appl. Phys. Lett , vol.74 , pp. 3610-3612
    • Langer, R.1    Barski, A.2    Simon, J.3    Pelekanos, N.4    Konovalov, O.5    Andre, R.6    Dang, L.7
  • 5
    • 0035956158 scopus 로고    scopus 로고
    • Vertical violet light emitting diode incorporating an aluminum gallium nitride distributed Bragg mirror and a tunnel junction
    • M. Diage, Y. He, H. Zhou, E. Makarona, A. Nurmikko, J. Han, K. Waldrip, J. Figiel, T. Takeuchi, and M. Krames, "Vertical violet light emitting diode incorporating an aluminum gallium nitride distributed Bragg mirror and a tunnel junction," Appl. Phys. Lett. 79, 3720-3722 (2001).
    • (2001) Appl. Phys. Lett , vol.79 , pp. 3720-3722
    • Diage, M.1    He, Y.2    Zhou, H.3    Makarona, E.4    Nurmikko, A.5    Han, J.6    Waldrip, K.7    Figiel, J.8    Takeuchi, T.9    Krames, M.10
  • 10
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    • Refractive index of AlGaInN alloys
    • T. Peng and J. Piprek, "Refractive index of AlGaInN alloys," Electron. Lett. 32, 2285-2286 (1996).
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    • Peng, T.1    Piprek, J.2
  • 12
    • 0000522945 scopus 로고    scopus 로고
    • Refractive index of InGaN/ GaN quantum well
    • M. Leung, A. Djurisic, and E. Li, "Refractive index of InGaN/ GaN quantum well," J. Appl. Phys. 84, 6312-6317 (1998).
    • (1998) J. Appl. Phys , vol.84 , pp. 6312-6317
    • Leung, M.1    Djurisic, A.2    Li, E.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.