Thickness dependent structural, magnetic and transport properties of nanostructured cobalt thin films

Journal of Nanoscience and Nanotechnology

Volumn 7, Issue 6, 2007, Pages 2041-2045

  Sharma, A ^a   Tripathi, S ^a   Brajpuriya, R ^a   Shripathi, T ^a   Chaudharit, S M ^a  

^a University Grant Commission   (India)

Author keywords

AFM; Co thin film; MOKE; Resistivity; XRD

Indexed keywords

(ABIOTIC AND BIOTIC) STRESS; (P ,P ,T) MEASUREMENTS; (PL) PROPERTIES; ATOMIC FORCE MICROSCOPY (AFM); CO FILMS; CO THIN FILMS; COBALT THIN FILMS; COERCIVITY; MAGNETIC (CE); MAGNETIC AND TRANSPORT PROPERTIES; NANO CRYSTALLINE; NANO-STRUCTURED; SATURATION FIELD (HS); TRANSPORT MEASUREMENTS; X RAY DIFFRACTION (XRD);

AMORPHOUS MATERIALS; ATOMIC FORCE MICROSCOPY; COBALT; CRYSTAL ATOMIC STRUCTURE; CRYSTAL STRUCTURE; FERROMAGNETISM; GRAIN GROWTH; MAGNETIC FILMS; MAGNETIC MATERIALS; MAGNETIC THIN FILMS; MAGNETISM; MICROSCOPIC EXAMINATION; MOLECULAR BEAM EPITAXY; SCANNING PROBE MICROSCOPY; SOLIDS; THICK FILMS; THIN FILM DEVICES; THIN FILMS; TRANSITION METALS; TRANSPORT PROPERTIES; VAPOR DEPOSITION; X RAY ANALYSIS; X RAY DIFFRACTION ANALYSIS;

FILM THICKNESS;

COBALT; NANOMATERIAL;

ARTICLE; ARTIFICIAL MEMBRANE; CHEMISTRY; CONFORMATION; CRYSTALLIZATION; ELECTRON TRANSPORT; IMPEDANCE; MACROMOLECULE; MAGNETISM; MATERIALS TESTING; METHODOLOGY; NANOTECHNOLOGY; PARTICLE SIZE; SURFACE PROPERTY; ULTRASTRUCTURE;

COBALT; CRYSTALLIZATION; ELECTRIC IMPEDANCE; ELECTRON TRANSPORT; MACROMOLECULAR SUBSTANCES; MAGNETICS; MATERIALS TESTING; MEMBRANES, ARTIFICIAL; MOLECULAR CONFORMATION; NANOSTRUCTURES; NANOTECHNOLOGY; PARTICLE SIZE; SURFACE PROPERTIES;

EID: 34548407313     PISSN: 15334880     EISSN: None     Source Type: Journal    
DOI: 10.1166/jnn.2007.765     Document Type: Conference Paper

References (14)

1. S. Y. Chou, P. R. Krauss, and L. Kong, J. Appl. Phys. 79, 6101 (1996).
2. M. Ruhrig, S. Porthun, J. C. Lodder, S. McVitie, L. J. Heyderman, A. B. Johnston, and J. N. Chapman, J. Appl. Phys 79, 2913 (1996).
3. G. A. Prinz, Phys. Today 48, 58 (1995).
4. S. P. Murarka, Silicide for VLSI Applications, Academic Press, New York (1983).
5. S. Datta and B. Das, Appl. Phys. Lett. 56, 665 (1990).
6. S. S. P. Parkin, Phys. Rev. Lett. 71, 1641 (1993).
7. Y. Yoshizawa, S. Oguma, and K. Yamauchi, J. Appl. Phys. 64, 6044 (1988).
8. A. Kharmouche, S. M. Cherif, A. Bourzami, A. Layadi, and G. Schmerber, J. Phys. D: Appl. Phys. 37, 2583 (2004).
9. Z. Ding, P. M. Thibado, C. Awo-Affouda, and V. P. Labella, J. Vac. Sci. Technol. B 22, 2068 (2004).
10. R. Hammerling, C. Uiberacker, J. Zabloudil, and P. Weinberger, Phys. Rev. B 66, 052402 (2002).
11. K. H. Lee, H. S. Lee, J. Y. Lee, T. W. Kim, K. H. Yoo, and Y. S. Yoon, Mater. Res. Bullet. 39, 1369 (2004).
12. J. P. Eberhart, Analyse Structurale et Chimiques des Materiaux, Bordas, Paris (1989).
13. B. D. Cullity, Introduction to Magnetic Materials, Addison Wesley, Massachusetts (1972).
14. A. Sharma, R. Brajpuriya, S. Tripathi, and S. M. Chaudhari, J. Vac. Sci. Technol. A 24, 74 (2006).