Microstructural properties of Co thin films grown on p-GaAs (1 0 0) Substrates

Materials Research Bulletin

Volumn 39, Issue 10, 2004, Pages 1369-1374

  Lee, K H ^a   Lee, H S ^a   Lee, J Y ^a   Kim, T W ^b   Yoo, K H ^c   Yoon, Y S ^d  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b Hanyang University   (South Korea)

^c Kyung Hee University   (South Korea)

^d Korea Institute of Science and Technology   (South Korea)

Author keywords

A. Thin films; D. Microsturucture

Indexed keywords

ATOMIC FORCE MICROSCOPY; FILM GROWTH; HETEROJUNCTIONS; ION BEAMS; METALLIC FILMS; MICROSTRUCTURE; SEMICONDUCTING GALLIUM ARSENIDE; SURFACE ROUGHNESS; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

ION-BEAM ASSISTED DEPOSITION; METAL-SEMICONDUCTOR HETEROSTRUCTURES; ROOM TEMPERATURE; SPINTRONIC DEVICES;

COBALT COMPOUNDS;

EID: 3042853799     PISSN: 00255408     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.materresbull.2004.04.036     Document Type: Article

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