A closed-form DC model for long-channel thin-film transistors with gate voltage-dependent mobility characteristics

Solid-State Electronics

Volumn 49, Issue 4, 2005, Pages 648-653

  Hoffman, R L ^a  

^a HEWLETT PACKARD COMPANY   (United States)

Author keywords

Gate voltage dependent mobility; Thin film transistor model

Indexed keywords

APPROXIMATION THEORY; CARRIER MOBILITY; ELECTRON TRANSPORT PROPERTIES; INTEGRATION; LIQUID CRYSTAL DISPLAYS; MATHEMATICAL MODELS; MISFET DEVICES; PARAMETER ESTIMATION; POLYNOMIALS; POLYSILICON; VOLTAGE CONTROL;

CHANNEL MOBILITY; DRAIN VOLTAGE; GATE VOLTAGE-DEPENDENT MOBILITY; THIN-FILM TRANSISTOR MODEL;

THIN FILM TRANSISTORS;

EID: 13644265792     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2004.12.009     Document Type: Article

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