Influence of N2/H2 plasma treatment on chemical vapor deposited TiN multilayer structures for advanced CMOS technologies

Materials Science and Engineering: B

Volumn 102, Issue 1-3, 2003, Pages 358-361

  Melnik, V ^a   Wolanski, D ^a   Bugiel, E ^a   Goryachko, A ^a   Chernjavski, S ^a   Kruger D ^a  

^a IHP   (Germany)

Author keywords

Chemical vapor deposition; Plasma treatment; Titanium nitride; ToF SIMS

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; CHEMICAL VAPOR DEPOSITION; CMOS INTEGRATED CIRCUITS; CRYSTALLIZATION; PLASMAS; SECONDARY ION MASS SPECTROMETRY; SPUTTER DEPOSITION; TRANSMISSION ELECTRON MICROSCOPY;

PLASMA TREATMENT;

TITANIUM NITRIDE;

EID: 0043013467     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(02)00619-0     Document Type: Conference Paper

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