Influence of phonon dispersion on transient thermal response of silicon-on-insulator transistors under self-heating conditions

Journal of Heat Transfer

Volumn 129, Issue 7, 2007, Pages 790-797

  Escobar, Rodrigo A ^a   Amon, Cristina H ^b,c  

^a PONTIFICIA UNIVERSIDAD CATÓLICA DE CHILE   (Chile)

^b CARNEGIE MELLON UNIVERSITY   (United States)

^c UNIVERSITY OF TORONTO   (Canada)

Author keywords

BTE; Conduction; Electronics; LBM; Nanoscale; Phonon transport

Indexed keywords

BOLTZMANN EQUATION; COMPUTER SIMULATION; DEBYE TEMPERATURE; JOULE HEATING; THERMAL ENERGY; TRANSIENT ANALYSIS; TRANSISTORS; TRANSPORT PROPERTIES;

BALLISTIC PHONON TRANSPORT; FOURIER DIFFUSION; LATTICE BOLTZMANN METHOD;

SILICON ON INSULATOR TECHNOLOGY;

BOLTZMANN EQUATION; COMPUTER SIMULATION; DEBYE TEMPERATURE; JOULE HEATING; SILICON ON INSULATOR TECHNOLOGY; THERMAL ENERGY; TRANSIENT ANALYSIS; TRANSISTORS; TRANSPORT PROPERTIES;

EID: 34548212249     PISSN: 00221481     EISSN: None     Source Type: Journal    
DOI: 10.1115/1.2717243     Document Type: Article

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