-
1
-
-
0035244549
-
Sub-continuum simulations of heat conduction in silicon-on-insulator transistors
-
P. Sverdrup, Y. S. Ju, and K. E. Goodson, "Sub-continuum simulations of heat conduction in silicon-on-insulator transistors," Journal of Heat Transfer, vol. 123, pp. 130-137, 2001.
-
(2001)
Journal of Heat Transfer
, vol.123
, pp. 130-137
-
-
Sverdrup, P.1
Ju, Y.S.2
Goodson, K.E.3
-
3
-
-
35949025517
-
The Monte Carlo method for the solution of charge transport in semiconductor with applications to covalent materials
-
July
-
C. Jacoboni and L. Reggiani, "The Monte Carlo method for the solution of charge transport in semiconductor with applications to covalent materials," Reviews of Modern Physics, vol. 55, no. 3, pp. 645-705, July 1983.
-
(1983)
Reviews of Modern Physics
, vol.55
, Issue.3
, pp. 645-705
-
-
Jacoboni, C.1
Reggiani, L.2
-
4
-
-
35949009958
-
Monte Carlo analysis of electron transport in small semiconductor devices including band-structure and space-charge effects
-
M. V. Fischetti and S. E. Laux, "Monte Carlo analysis of electron transport in small semiconductor devices including band-structure and space-charge effects," Physical Review B, vol. 38, no. 14, pp. 9721-9745, 1988.
-
(1988)
Physical Review B
, vol.38
, Issue.14
, pp. 9721-9745
-
-
Fischetti, M.V.1
Laux, S.E.2
-
5
-
-
36449002522
-
A Monte Carlo simulation of anisotropic electron transport in silicon including full band structure and anisotropic impact-ionization model
-
T. Kunikiyo, M. Takenaka, Y. Kamakura, M. Yamaji, H. Mizuno, M. Morifuji, K. Taniguchi, and C. Hamaguchi, "A Monte Carlo simulation of anisotropic electron transport in silicon including full band structure and anisotropic impact-ionization model," Journal of Applied Physics, vol. 75, no. 1, pp. 297-312, 1994.
-
(1994)
Journal of Applied Physics
, vol.75
, Issue.1
, pp. 297-312
-
-
Kunikiyo, T.1
Takenaka, M.2
Kamakura, Y.3
Yamaji, M.4
Mizuno, H.5
Morifuji, M.6
Taniguchi, K.7
Hamaguchi, C.8
-
6
-
-
0001023655
-
Scattering of conduction electrons by lattice vibrations in silicon
-
D. Long, "Scattering of conduction electrons by lattice vibrations in silicon," Physical Review, vol. 120, no. 6, pp. 2024-2032, 1960.
-
(1960)
Physical Review
, vol.120
, Issue.6
, pp. 2024-2032
-
-
Long, D.1
-
10
-
-
0000923887
-
A full-band Monte Carlo model for the temperature dependence of electron and hole transport in silicon
-
B. Fischer and K. R. Hofmann, "A full-band Monte Carlo model for the temperature dependence of electron and hole transport in silicon," Applied Physics Letters, vol. 76, no. 5, pp. 583-585, 2000.
-
(2000)
Applied Physics Letters
, vol.76
, Issue.5
, pp. 583-585
-
-
Fischer, B.1
Hofmann, K.R.2
-
11
-
-
36149023347
-
Transport and deformation-potential theory for many-valley semiconductors with anisotropic scattering
-
C. Herring and E. Vogt, "Transport and deformation-potential theory for many-valley semiconductors with anisotropic scattering," Physical Review, vol. 101, no. 3, pp. 944-961, 1956.
-
(1956)
Physical Review
, vol.101
, Issue.3
, pp. 944-961
-
-
Herring, C.1
Vogt, E.2
-
13
-
-
0000693505
-
Electron drift velocity in silicon
-
C. Canali, C. Jacoboni, F. Nava, G. Ottaviani, and A. Alberigi-Quaranta, "Electron drift velocity in silicon," Physical Review B, vol. 12, no. 4, pp. 2265-2284, 1975.
-
(1975)
Physical Review B
, vol.12
, Issue.4
, pp. 2265-2284
-
-
Canali, C.1
Jacoboni, C.2
Nava, F.3
Ottaviani, G.4
Alberigi-Quaranta, A.5
-
14
-
-
0036253371
-
Essential physics of carrier transport in nanoscale MOSFETs
-
M. Lundstrom and Z. Ren, "Essential physics of carrier transport in nanoscale MOSFETs," IEEE Trans. Electron Devices, vol. 49, pp. 133-141, 2002.
-
(2002)
IEEE Trans. Electron Devices
, vol.49
, pp. 133-141
-
-
Lundstrom, M.1
Ren, Z.2
-
15
-
-
0035716659
-
Localized heating effects and scaling of sub-0.18 micron CMOS devices
-
E. Pop, K. Banerjee, P. Sverdrup, R. Dutton, and K. E. Goodson, "Localized heating effects and scaling of sub-0.18 micron CMOS devices," in Proc. IEEE International Electron Devices Meeting (IEDM), Dec. 2001, pp. 677-680.
-
Proc. IEEE International Electron Devices Meeting (IEDM), Dec. 2001
, pp. 677-680
-
-
Pop, E.1
Banerjee, K.2
Sverdrup, P.3
Dutton, R.4
Goodson, K.E.5
-
16
-
-
84943315480
-
-
Available
-
Monet. [Online]. Available: http://nanoheat.stanford.edu
-
Monet. [Online]
-
-
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