Synthesis and properties of p-type nitrogen-doped ZnO thin films by pulsed laser ablation of a Zn-rich Zn3N2 target

Journal of Materials Research

Volumn 22, Issue 8, 2007, Pages 2339-2344

  Allenic, A ^a   Guo, W ^a   Chen, Y B ^a   Zhao, G Y ^a   Pan, X Q ^a   Che, Y ^b   Hu, Z D ^b   Liu, B ^b  

^a UNIVERSITY OF MICHIGAN   (United States)

^b IMRA AMERICA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL DEFECTS; EPITAXIAL FILMS; FILM GROWTH; GRAIN BOUNDARIES; HALL EFFECT; LASER ABLATION; PHOTOLUMINESCENCE; ZINC OXIDE;

ANNIHILATION; POSTDEPOSITION ANNEALING; PULSED LASER ABLATION;

OXIDE FILMS;

EID: 34548136594     PISSN: 08842914     EISSN: None     Source Type: Journal    
DOI: 10.1557/jmr.2007.0294     Document Type: Article

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