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Volumn , Issue , 2007, Pages 41-46

A new simulation method for NBTI analysis in SPICE environment

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC NETWORK ANALYSIS; NUMERICAL METHODS; THRESHOLD VOLTAGE;

EID: 34548128261     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISQED.2007.21     Document Type: Conference Paper
Times cited : (12)

References (13)
  • 1
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    • The International Technology Roadmap for Semiconductors (ITRS), 2005.
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  • 3
    • 34547293316 scopus 로고    scopus 로고
    • Predictive modeling of NBTI effect for reliable design
    • S. Bhardwaj, W. Wang, R. Vattikonda, Y. Cao, S. Vrudhula, "Predictive modeling of NBTI effect for reliable design," CICC, pp. 189-192, 2006.
    • (2006) CICC , pp. 189-192
    • Bhardwaj, S.1    Wang, W.2    Vattikonda, R.3    Cao, Y.4    Vrudhula, S.5
  • 4
    • 23844466920 scopus 로고    scopus 로고
    • Impact of NBTI on the temporal performance degradation of digital circuits
    • B. C. Paul, K. Kang, H. Kufluoglu, M. A. Alam, and K. Roy, "Impact of NBTI on the temporal performance degradation of digital circuits," EDL, vol. 26, pp. 560-562, 2003.
    • (2003) EDL , vol.26 , pp. 560-562
    • Paul, B.C.1    Kang, K.2    Kufluoglu, H.3    Alam, M.A.4    Roy, K.5
  • 5
    • 0032276824 scopus 로고    scopus 로고
    • Ratio based hot-carrier degradation modeling for aged timing simulation of millions of transistors in digital circuits
    • H.Yonezawa, et al, "Ratio based hot-carrier degradation modeling for aged timing simulation of millions of transistors in digital circuits," IEDM Tech. Dig, p.93, 1998.
    • (1998) IEDM Tech. Dig , pp. 93
    • Yonezawa, H.1
  • 7
    • 19044394081 scopus 로고    scopus 로고
    • A geometrical unification of the theories of NBTI and HCI time-exponents and its implication for ultra scaled planar and surround-gate mosfets
    • H. Kufluoglu, M. A. Alam "A geometrical unification of the theories of NBTI and HCI time-exponents and its implication for ultra scaled planar and surround-gate mosfets," IEDM, pp. 113-116, 2004.
    • (2004) IEDM , pp. 113-116
    • Kufluoglu, H.1    Alam, M.A.2
  • 8
    • 10044266222 scopus 로고    scopus 로고
    • A comprehensive model of PMOS NBTI degradation
    • M. A. Alam, S. Mahapatra, "A comprehensive model of PMOS NBTI degradation," Microelectronics Reliability, vol. 45, pp. 71-81, 2005.
    • (2005) Microelectronics Reliability , vol.45 , pp. 71-81
    • Alam, M.A.1    Mahapatra, S.2
  • 10
    • 34548126630 scopus 로고    scopus 로고
    • A simple view of complex phenomena
    • Alam et al., "A simple view of complex phenomena," IRPS tutorial, 2006.
    • (2006) IRPS tutorial
    • Alam1
  • 11
    • 0842309776 scopus 로고    scopus 로고
    • Universal recovery behavior of negative bias temperature instability
    • S. Rangan, N. Mielke, E. C. C. Yeh, "Universal recovery behavior of negative bias temperature instability," IEDM, pp. 341-344, 2003.
    • (2003) IEDM , pp. 341-344
    • Rangan, S.1    Mielke, N.2    Yeh, E.C.C.3
  • 12
    • 0037634588 scopus 로고    scopus 로고
    • Dynamic NBTI of PMOS transistors and its impact on device lifetime
    • G. Chen, et al., "Dynamic NBTI of PMOS transistors and its impact on device lifetime," IRPS, pp. 196-202, 2003.
    • (2003) IRPS , pp. 196-202
    • Chen, G.1
  • 13
    • 3042607843 scopus 로고    scopus 로고
    • Hole trapping effect on methodology for DC and AC negative bias temperature instability measurements in PMOS transistors
    • V. Huard, M. Denais, "Hole trapping effect on methodology for DC and AC negative bias temperature instability measurements in PMOS transistors," IRPS, pp. 40-45, 2004.
    • (2004) IRPS , pp. 40-45
    • Huard, V.1    Denais, M.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.