Cleaning of residual silicon on InP regrowth interface in MOVPE reactor

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 2004, Pages 126-129

  Naniwae, Koichi ^a   Ohya, Masaki ^a   Hamamoto, Kiichi ^a   Nishi, Kenichi ^a   Sasaki, Tatsuya ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHLORINE COMPOUNDS; CLEANING; HETEROJUNCTIONS; ION IMPLANTATION; LEAKAGE CURRENTS; METALLORGANIC VAPOR PHASE EPITAXY; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR GROWTH; SEMICONDUCTOR LASERS;

GROWTH RATE; LIGHT CURRENT CHARACTERISTICS; REGROWTH INTERFACES; RESIDUAL SILICON;

SILICON;

EID: 23744500793     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

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