A novel feature of neutron-induced multi-cell upsets in 130 and 180 nm SRAMs

IEEE Transactions on Nuclear Science

Volumn 54, Issue 4, 2007, Pages 1030-1036

  Yahagi, Yasuo ^b   Yamaguchi, Hironaru ^b   Lbe, Eishi ^a,b   Kameyama, Hideaki ^a,c   Sato, Masatoshi ^c   Akioka, Takashi ^a,c   Yamamoto, Shigehisa ^c  

^a IEEE

^b HITACHI LTD   (Japan)

^c RENESAS TECHNOLOGY CORP   (Japan)

Author keywords

Bipolar action; Distribution function; Frequency distribution; Lorentzian; Mono energetic neutron; Multi cell upset (MCU); Quasi mono energetic neutron; Single event upset (SEU); Spallation neutron; SRAM

Indexed keywords

CMOS INTEGRATED CIRCUITS; DISTRIBUTION FUNCTIONS; NEUTRONS; WEIBULL DISTRIBUTION;

BIPOLAR ACTION; SINGLE EVENT UPSETS (SEU); THRESHOLD ENERGY;

STATIC RANDOM ACCESS STORAGE;

EID: 34548104566     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2007.897066     Document Type: Conference Paper

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